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This is a 1024Mx64 bits 8GB(8192MB) DDR3-1600(CL11)-11-11-28 SDRAM memory module, The SPD is programmed to JEDEC standard latency 1600Mbps timing of 11-11-11-28 at 1.5V. The module is composed of six-teen 512Mx8 bits CMOS DDR3 SDRAMs in FBGA package and one 2Kbit EEPROM in 8pin TDFN package on a 240pin glass–epoxy printed circuit board. The module is a Dual In-line Memory Module and intended for mounting onto 240-pins edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features: – Power supply (Normal): VDD & VDDQ = 1.5V ± 0.075V – 1.5V (SSTL_15 compatible) I/O – MRS Cycle with address key programs – CAS Latency (5,6,7,8,9,10,11) – Burst Length (BL):8 and 4 with Burst Chop(BC) – Bi-directional, differential data strobe (DQS and /DQS) – Differential clock input (CK, /CK) operation – DLL aligns DQ and DQS transition with CK transition – Double-data-rate architecture; two data transfers per clock cycle – 8 independent internal bank – Internal (self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm±1%) – Auto refresh and self refresh – Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE 95°C – 8-bit pre-fetch. – On Die Termination using ODT pin. – Lead-free and Halogen-free products are RoHS Compliant
04713435794166
AD3U1600W8G11-2
99 měsíců
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